Show Hamamatsu Avalanche Photo Diode 0817008488
This is all the information about APD 0817008488. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0817008488 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F03 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
376.2 V |
| Dark current: |
2.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
355 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10540 |
| |
|
| Shipment: |
|
| Grid number: |
78 |
| Position in grid: |
15 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
11. Aug 2017 |
| Dose used: |
46 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
376.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.6237477 V T = -25 °C: 341.527708 V |
| Voltage for Gain 150: |
T = +20 °C: 384.5265426 V T = -25 °C: 348.8667581 V |
| Voltage for Gain 200: |
T = +20 °C: 388.9140207 V T = -25 °C: 352.9994542 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.36760315 V-1 T = -25 °C: 4.775886409 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.467606857 V-1 T = -25 °C: 9.606059512 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.50432637 V-1 T = -25 °C: 15.2025755 V-1 |
| Break-through voltage: |
T = +20 °C: 411.5392816 V T = -25 °C: 368.685918 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
