Show Hamamatsu Avalanche Photo Diode 0817008485
This is all the information about APD 0817008485. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0817008485 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0817008485/3408036962 |
| Unit: |
#3579 (barcode 1309026807) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D12 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.2 V |
| Dark current: |
3.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
300 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10367 |
| |
|
| Shipment: |
|
| Grid number: |
78 |
| Position in grid: |
9 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
11. Aug 2017 |
| Dose used: |
46 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
382.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.8829145 V T = -25 °C: 347.0728546 V |
| Voltage for Gain 150: |
T = +20 °C: 390.7504748 V T = -25 °C: 354.4495848 V |
| Voltage for Gain 200: |
T = +20 °C: 395.1212656 V T = -25 °C: 358.5939059 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.62797975 V-1 T = -25 °C: 4.902477176 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.181619946 V-1 T = -25 °C: 9.043057378 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.29400476 V-1 T = -25 °C: 16.03571794 V-1 |
| Break-through voltage: |
T = +20 °C: 410.5629866 V T = -25 °C: 373.9142125 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history