Show Hamamatsu Avalanche Photo Diode 0817008482
This is all the information about APD 0817008482. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0817008482 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
374.8 V |
| Dark current: |
3.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
355 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10540 |
| |
|
| Shipment: |
|
| Grid number: |
78 |
| Position in grid: |
3 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
11. Aug 2017 |
| Dose used: |
46 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
374.8 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 374.9490522 V T = -25 °C: 340.108 V |
| Voltage for Gain 150: |
T = +20 °C: 382.782957 V T = -25 °C: 347.3171733 V |
| Voltage for Gain 200: |
T = +20 °C: 387.1523892 V T = -25 °C: 351.37148 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.65163873 V-1 T = -25 °C: 5.006445507 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.172036439 V-1 T = -25 °C: 9.396096338 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.26083968 V-1 T = -25 °C: 14.91823228 V-1 |
| Break-through voltage: |
T = +20 °C: 402.8728552 V T = -25 °C: 366.4981787 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
