Show Hamamatsu Avalanche Photo Diode 0817008478
This is all the information about APD 0817008478. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0817008478 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D07 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
373.9 V |
| Dark current: |
3.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
379 |
| Position in Box: |
25 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10579 |
| |
|
| Shipment: |
|
| Grid number: |
61 |
| Position in grid: |
15 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
373.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 374.6429403 V T = -25 °C: 340.0447515 V |
| Voltage for Gain 150: |
T = +20 °C: 382.482424 V T = -25 °C: 347.2493987 V |
| Voltage for Gain 200: |
T = +20 °C: 386.8504463 V T = -25 °C: 351.308427 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.721227942 V-1 T = -25 °C: 5.00299026 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.323687263 V-1 T = -25 °C: 9.380520234 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.52971595 V-1 T = -25 °C: 16.86969765 V-1 |
| Break-through voltage: |
T = +20 °C: 402.4393496 V T = -25 °C: 366.4081596 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
