Show Hamamatsu Avalanche Photo Diode 0816008470
This is all the information about APD 0816008470. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0816008470 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C14 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
389.1 V |
| Dark current: |
3.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
297 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10362 |
| |
|
| Shipment: |
|
| Grid number: |
61 |
| Position in grid: |
1 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
389.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.8833189 V T = -25 °C: 352.9207901 V |
| Voltage for Gain 150: |
T = +20 °C: 396.8175517 V T = -25 °C: 360.5274422 V |
| Voltage for Gain 200: |
T = +20 °C: 401.2205892 V T = -25 °C: 364.7884566 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.591352888 V-1 T = -25 °C: 4.823452154 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.073033686 V-1 T = -25 °C: 8.7778406 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.05444347 V-1 T = -25 °C: 15.29505462 V-1 |
| Break-through voltage: |
T = +20 °C: 416.4234617 V T = -25 °C: 380.5577001 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
