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Show Hamamatsu Avalanche Photo Diode 4809046366


This is all the information about APD 4809046366. If it is wrong, edit the data.

Subdetector specification:  
Serial: 4809046366
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E09
Break-through voltage: 410 V
Voltage for Gain 100 (T=+25°C): 383.5 V
Dark current: 5.8 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 514
Position in Box: 34
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
27. Jul 2021 16:21:34 CEST oafedulidis Updated APD location via API.
27. Jul 2021 16:21:16 CEST oafedulidis Updated box and position via API.
24. Jun 2021 16:03:29 CEST Tobias Imported from Hamamatsu datasheet.