Show Hamamatsu Avalanche Photo Diode 0816008400
This is all the information about APD 0816008400. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0816008400 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H08 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
389.5 V |
| Dark current: |
2.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
417 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10654 |
| |
|
| Shipment: |
|
| Grid number: |
62 |
| Position in grid: |
14 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
389.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.8905338 V T = -25 °C: 353.7051083 V |
| Voltage for Gain 150: |
T = +20 °C: 397.7658927 V T = -25 °C: 361.2664903 V |
| Voltage for Gain 200: |
T = +20 °C: 402.2254237 V T = -25 °C: 365.5771741 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.668785977 V-1 T = -25 °C: 4.943462459 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.12543612 V-1 T = -25 °C: 8.850189444 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.82741737 V-1 T = -25 °C: 15.66692895 V-1 |
| Break-through voltage: |
T = +20 °C: 410.5074548 V T = -25 °C: 381.5781722 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
