Show Hamamatsu Avalanche Photo Diode 0815008392
This is all the information about APD 0815008392. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0815008392 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D15 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.7 V |
| Dark current: |
5.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
310 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10385 |
| |
|
| Shipment: |
|
| Grid number: |
62 |
| Position in grid: |
0 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
384.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.8711674 V T = -25 °C: 348.8883984 V |
| Voltage for Gain 150: |
T = +20 °C: 392.8370497 V T = -25 °C: 356.3882705 V |
| Voltage for Gain 200: |
T = +20 °C: 397.2691495 V T = -25 °C: 360.6059259 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.562491032 V-1 T = -25 °C: 4.888502852 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.945332544 V-1 T = -25 °C: 8.939189064 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.84041218 V-1 T = -25 °C: 15.64494002 V-1 |
| Break-through voltage: |
T = +20 °C: 413.1481553 V T = -25 °C: 376.4001573 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history