Show Hamamatsu Avalanche Photo Diode 0815008375
This is all the information about APD 0815008375. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0815008375 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F13 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.4 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
379 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10579 |
| |
|
| Shipment: |
|
| Grid number: |
61 |
| Position in grid: |
10 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
383.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.2897923 V T = -25 °C: 347.9303194 V |
| Voltage for Gain 150: |
T = +20 °C: 391.2847617 V T = -25 °C: 355.3842853 V |
| Voltage for Gain 200: |
T = +20 °C: 395.7292331 V T = -25 °C: 359.5680865 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.440432078 V-1 T = -25 °C: 4.909827593 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.564847274 V-1 T = -25 °C: 9.056871091 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.81117402 V-1 T = -25 °C: 16.00090808 V-1 |
| Break-through voltage: |
T = +20 °C: 411.6643349 V T = -25 °C: 375.2414633 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
