Show Hamamatsu Avalanche Photo Diode 0815008363
This is all the information about APD 0815008363. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0815008363 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
402 V |
| Voltage for Gain 100 (T=+25°C): |
373.7 V |
| Dark current: |
2.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
299 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10366 |
| |
|
| Shipment: |
|
| Grid number: |
70 |
| Position in grid: |
13 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
373.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 373.4314564 V T = -25 °C: 338.5378799 V |
| Voltage for Gain 150: |
T = +20 °C: 381.3026265 V T = -25 °C: 345.7823592 V |
| Voltage for Gain 200: |
T = +20 °C: 385.6908109 V T = -25 °C: 349.8563801 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.488857897 V-1 T = -25 °C: 4.82767368 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.687815333 V-1 T = -25 °C: 9.873311527 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.07097206 V-1 T = -25 °C: 15.84442903 V-1 |
| Break-through voltage: |
T = +20 °C: 402.6347407 V T = -25 °C: 365.2704578 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
