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Show Hamamatsu Avalanche Photo Diode 4119041699


This is all the information about APD 4119041699. If it is wrong, edit the data.

Subdetector specification:  
Serial: 4119041699
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: H06
Break-through voltage: 415 V
Voltage for Gain 100 (T=+25°C): 389.2 V
Dark current: 9.9 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 465
Position in Box: 31
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
10. May 2021 15:40:58 CEST oafedulidis Updated APD location via API.
10. May 2021 15:40:43 CEST oafedulidis Updated box and position via API.
20. Apr 2021 12:33:11 CEST Tobias Imported from Hamamatsu datasheet.