Show Hamamatsu Avalanche Photo Diode 0812008118
This is all the information about APD 0812008118. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0812008118 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 0812008118/0808007840 |
Unit: |
#3462 (barcode 1309034987) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
F02 |
Break-through voltage: |
407 V |
Voltage for Gain 100 (T=+25°C): |
378.8 V |
Dark current: |
3.1 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
294 |
Position in Box: |
12 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10357 |
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Shipment: |
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Grid number: |
109 |
Position in grid: |
15 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
17. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
10. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
378.8 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.6811634 V T = -25 °C: 344.0964389 V |
Voltage for Gain 150: |
T = +20 °C: 387.5497441 V T = -25 °C: 351.5054595 V |
Voltage for Gain 200: |
T = +20 °C: 391.9010646 V T = -25 °C: 355.6649231 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.372890502 V-1 T = -25 °C: 4.909580993 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.491920496 V-1 T = -25 °C: 8.995199238 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.69567672 V-1 T = -25 °C: 15.76442913 V-1 |
Break-through voltage: |
T = +20 °C: 406.498375 V T = -25 °C: 370.8845198 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history