Show Hamamatsu Avalanche Photo Diode 0812008115
This is all the information about APD 0812008115. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008115 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E12 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
389.3 V |
| Dark current: |
6.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
294 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10357 |
| |
|
| Shipment: |
|
| Grid number: |
109 |
| Position in grid: |
9 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
389.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.7039668 V T = -25 °C: 353.3762188 V |
| Voltage for Gain 150: |
T = +20 °C: 397.5682729 V T = -25 °C: 360.9111426 V |
| Voltage for Gain 200: |
T = +20 °C: 401.9188679 V T = -25 °C: 365.1363825 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.689554659 V-1 T = -25 °C: 4.694889186 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.337613185 V-1 T = -25 °C: 9.335392781 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.65835801 V-1 T = -25 °C: 14.61577237 V-1 |
| Break-through voltage: |
T = +20 °C: 417.2468815 V T = -25 °C: 380.5730923 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
