Show Hamamatsu Avalanche Photo Diode 0812008090
This is all the information about APD 0812008090. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008090 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2701030062/0812008090 |
| Unit: |
#1167 (barcode 1309012701) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C06 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.3 V |
| Dark current: |
6.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
196 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10156 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
25. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.9578794 V T = -25 °C: 347.5013713 V |
| Voltage for Gain 150: |
T = +20 °C: 390.8485095 V T = -25 °C: 354.8878595 V |
| Voltage for Gain 200: |
T = +20 °C: 395.2383927 V T = -25 °C: 359.0575267 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.559582131 V-1 T = -25 °C: 4.693669 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.882722361 V-1 T = -25 °C: 9.349553855 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.40488457 V-1 T = -25 °C: 14.64594156 V-1 |
| Break-through voltage: |
T = +20 °C: 409.1582589 V T = -25 °C: 373.4293868 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history