Show Hamamatsu Avalanche Photo Diode 0811008067
This is all the information about APD 0811008067. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0811008067 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 0811008067/1803020148 |
Unit: |
#3636 (barcode 1309037858) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
blue |
|
|
Manufacturer information: |
|
Wafer position: |
E12 |
Break-through voltage: |
421 V |
Voltage for Gain 100 (T=+25°C): |
392.9 V |
Dark current: |
6.9 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
192 |
Position in Box: |
29 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10149 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 393.1865857 V T = -25 °C: 356.7664842 V |
Voltage for Gain 150: |
T = +20 °C: 401.0663352 V T = -25 °C: 364.4425983 V |
Voltage for Gain 200: |
T = +20 °C: 405.4378987 V T = -25 °C: 368.7246637 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.503112308 V-1 T = -25 °C: 4.797063705 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.780684951 V-1 T = -25 °C: 9.546190924 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.31510151 V-1 T = -25 °C: 14.94078234 V-1 |
Break-through voltage: |
T = +20 °C: 420.8180017 V T = -25 °C: 384.2035689 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history