Show Hamamatsu Avalanche Photo Diode 0810007960
This is all the information about APD 0810007960. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0810007960 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2316025480/0810007960 |
| Unit: |
#2086 (barcode 1309021482) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.9 V |
| Dark current: |
3.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
296 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10361 |
| |
|
| Shipment: |
|
| Grid number: |
102 |
| Position in grid: |
9 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
379.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.9862294 V T = -25 °C: 344.7123698 V |
| Voltage for Gain 150: |
T = +20 °C: 387.8648226 V T = -25 °C: 351.9810368 V |
| Voltage for Gain 200: |
T = +20 °C: 392.2330981 V T = -25 °C: 356.0600342 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.629164685 V-1 T = -25 °C: 4.75559536 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.194415372 V-1 T = -25 °C: 9.758822622 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.41091596 V-1 T = -25 °C: 15.70781285 V-1 |
| Break-through voltage: |
T = +20 °C: 407.8786888 V T = -25 °C: 371.2854 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
