Show Hamamatsu Avalanche Photo Diode 0810007954
This is all the information about APD 0810007954. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0810007954 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C11 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
385.4 V |
Dark current: |
3.1 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
362 |
Position in Box: |
42 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10555 |
|
|
Shipment: |
|
Grid number: |
102 |
Position in grid: |
16 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
23. Aug 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
10. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
385.4 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 386.8036918 V T = -25 °C: 350.6109914 V |
Voltage for Gain 150: |
T = +20 °C: 394.7601393 V T = -25 °C: 358.1554545 V |
Voltage for Gain 200: |
T = +20 °C: 399.2208818 V T = -25 °C: 362.3141491 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.875778446 V-1 T = -25 °C: 5.884621908 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.237377652 V-1 T = -25 °C: 9.275910529 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.53139522 V-1 T = -25 °C: 17.2295638 V-1 |
Break-through voltage: |
T = +20 °C: 415.1187889 V T = -25 °C: 377.1424497 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history