Show Hamamatsu Avalanche Photo Diode 0610004808
This is all the information about APD 0610004808. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0610004808 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C14 |
Break-through voltage: |
454 V |
Voltage for Gain 100 (T=+25°C): |
425.3 V |
Dark current: |
15.2 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
340 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10515 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 426.0305998 V T = -25 °C: 388.5317623 V |
Voltage for Gain 150: |
T = +20 °C: 433.8859818 V T = -25 °C: 396.4089924 V |
Voltage for Gain 200: |
T = +20 °C: 438.2635871 V T = -25 °C: 400.7605691 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.53419918 V-1 T = -25 °C: 4.340657492 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.869449148 V-1 T = -25 °C: 8.478219031 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.66049614 V-1 T = -25 °C: 14.67301846 V-1 |
Break-through voltage: |
T = +20 °C: 439.8445724 V T = -25 °C: 414.8505687 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history