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Show Hamamatsu Avalanche Photo Diode 0608004691


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Subdetector specification:  
Serial: 0608004691
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D06
Break-through voltage: 441 V
Voltage for Gain 100 (T=+25°C): 412 V
Dark current: 21.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 337
Position in Box: 29
EP1 batch: none
EP1 batch after irradiation: 10509
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 412.5533309 V     T = -25 °C: 375.3345932 V
Voltage for Gain 150: T = +20 °C: 420.5221874 V     T = -25 °C: 383.2284737 V
Voltage for Gain 200: T = +20 °C: 424.9092871 V     T = -25 °C: 387.5832585 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.326771912 V-1     T = -25 °C: 4.312000328 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.452073954 V-1     T = -25 °C: 9.104336478 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.59575078 V-1     T = -25 °C: 15.45101001 V-1
Break-through voltage: T = +20 °C: 437.1853489 V     T = -25 °C: 403.1462884 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 21:58:55 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:31:29 CET jreher Updated box and position via API.
06. Oct 2020 19:19:53 CEST jreher Updated APD location via API.
11. Aug 2020 17:53:47 CEST jreher Updated APD location via API.
21. Jul 2020 16:43:38 CEST jreher Updated APD batch assignment via API.
25. Nov 2019 15:20:07 CET Tobias Imported from Hamamatsu datasheet.