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Show Hamamatsu Avalanche Photo Diode 0607004596


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Subdetector specification:  
Serial: 0607004596
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit to Mainz
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: H06
Break-through voltage: 443 V
Voltage for Gain 100 (T=+25°C): 417.2 V
Dark current: 13.7 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 342
Position in Box: 23
EP1 batch: none
EP1 batch after irradiation: 10518
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 417.9795503 V     T = -25 °C: 381.2160627 V
Voltage for Gain 150: T = +20 °C: 425.8585754 V     T = -25 °C: 389.023198 V
Voltage for Gain 200: T = +20 °C: 430.2228462 V     T = -25 °C: 393.3673046 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.562269153 V-1     T = -25 °C: 4.516460007 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.108119847 V-1     T = -25 °C: 8.949781451 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.22139113 V-1     T = -25 °C: 14.06746683 V-1
Break-through voltage: T = +20 °C: 438.5610545 V     T = -25 °C: 406.3292437 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 21:59:43 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:32:08 CET jreher Updated box and position via API.
07. Oct 2020 15:45:51 CEST jreher Updated APD location via API.
17. Aug 2020 14:53:48 CEST vwerner Updated APD batch assignment via API.
11. Aug 2020 17:54:08 CEST jreher Updated APD location via API.
25. Nov 2019 15:20:05 CET Tobias Imported from Hamamatsu datasheet.