Show Hamamatsu Avalanche Photo Diode 0614005124
This is all the information about APD 0614005124. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0614005124 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E10 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
415.9 V |
| Dark current: |
12.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
249 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10285 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.3162865 V T = -25 °C: 378.9632548 V |
| Voltage for Gain 150: |
T = +20 °C: 424.2208413 V T = -25 °C: 386.8301122 V |
| Voltage for Gain 200: |
T = +20 °C: 428.5966613 V T = -25 °C: 391.1802015 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.49068406 V-1 T = -25 °C: 4.606000725 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.809782285 V-1 T = -25 °C: 9.223407948 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.47029873 V-1 T = -25 °C: 14.46302614 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0044548 V T = -25 °C: 406.4217633 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
