Show Hamamatsu Avalanche Photo Diode 0614005081
This is all the information about APD 0614005081. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0614005081 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D11 |
| Break-through voltage: |
447 V |
| Voltage for Gain 100 (T=+25°C): |
419.4 V |
| Dark current: |
16.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
247 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10282 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 419.9768672 V T = -25 °C: 382.6423302 V |
| Voltage for Gain 150: |
T = +20 °C: 427.9893263 V T = -25 °C: 390.5925978 V |
| Voltage for Gain 200: |
T = +20 °C: 432.4281522 V T = -25 °C: 394.9681802 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.522285492 V-1 T = -25 °C: 4.338806834 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.877982777 V-1 T = -25 °C: 8.424236652 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.74552232 V-1 T = -25 °C: 14.59963073 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0100168 V T = -25 °C: 409.8624281 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history