Show Hamamatsu Avalanche Photo Diode 0612004981
This is all the information about APD 0612004981. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0612004981 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
443 V |
| Voltage for Gain 100 (T=+25°C): |
415.7 V |
| Dark current: |
15.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
240 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10277 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.1960988 V T = -25 °C: 378.4403976 V |
| Voltage for Gain 150: |
T = +20 °C: 423.8739704 V T = -25 °C: 386.2886002 V |
| Voltage for Gain 200: |
T = +20 °C: 428.0928098 V T = -25 °C: 390.6450903 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.603048316 V-1 T = -25 °C: 4.455149985 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.371258719 V-1 T = -25 °C: 8.785292307 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.89742972 V-1 T = -25 °C: 15.3256298 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0063541 V T = -25 °C: 406.1514861 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
