Show Hamamatsu Avalanche Photo Diode 0809007851
This is all the information about APD 0809007851. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0809007851 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E08 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.3 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
295 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10360 |
| |
|
| Shipment: |
|
| Grid number: |
97 |
| Position in grid: |
13 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
388.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.167233 V T = -25 °C: 352.3506342 V |
| Voltage for Gain 150: |
T = +20 °C: 396.0607719 V T = -25 °C: 359.7632779 V |
| Voltage for Gain 200: |
T = +20 °C: 400.4515202 V T = -25 °C: 363.9541572 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.504930712 V-1 T = -25 °C: 4.574916249 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.879974246 V-1 T = -25 °C: 9.440284816 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.55478172 V-1 T = -25 °C: 15.61588727 V-1 |
| Break-through voltage: |
T = +20 °C: 416.0808017 V T = -25 °C: 379.1738851 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history