Show Hamamatsu Avalanche Photo Diode 0809007849
This is all the information about APD 0809007849. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0809007849 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0809007849/1707018921 |
| Unit: |
#3790 (barcode 1309039159) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B07 |
| Break-through voltage: |
421 V |
| Voltage for Gain 100 (T=+25°C): |
392.6 V |
| Dark current: |
3.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
295 |
| Position in Box: |
32 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10359 |
| |
|
| Shipment: |
|
| Grid number: |
97 |
| Position in grid: |
9 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
392.6 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.1777703 V T = -25 °C: 356.9921118 V |
| Voltage for Gain 150: |
T = +20 °C: 401.061865 V T = -25 °C: 364.6137374 V |
| Voltage for Gain 200: |
T = +20 °C: 405.4373584 V T = -25 °C: 368.8727374 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.506279023 V-1 T = -25 °C: 4.762189197 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.877558794 V-1 T = -25 °C: 9.538548974 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.59893352 V-1 T = -25 °C: 15.00906389 V-1 |
| Break-through voltage: |
T = +20 °C: 420.2189694 V T = -25 °C: 384.0865437 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
