Show Hamamatsu Avalanche Photo Diode 0809007845
This is all the information about APD 0809007845. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0809007845 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
390.6 V |
| Dark current: |
3.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
295 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10359 |
| |
|
| Shipment: |
|
| Grid number: |
97 |
| Position in grid: |
3 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
390.6 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.3520969 V T = -25 °C: 354.0738636 V |
| Voltage for Gain 150: |
T = +20 °C: 398.2271963 V T = -25 °C: 361.6418038 V |
| Voltage for Gain 200: |
T = +20 °C: 402.5874034 V T = -25 °C: 365.8777153 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.454592987 V-1 T = -25 °C: 4.772536154 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.704856527 V-1 T = -25 °C: 9.543963599 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.19635994 V-1 T = -25 °C: 14.97907647 V-1 |
| Break-through voltage: |
T = +20 °C: 417.4172976 V T = -25 °C: 381.099705 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history