Show Hamamatsu Avalanche Photo Diode 3713038492
This is all the information about APD 3713038492. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3713038492 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
H08 |
Break-through voltage: |
406 V |
Voltage for Gain 100 (T=+25°C): |
378 V |
Dark current: |
15.3 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
47 |
Position in Box: |
35 |
EP1 batch: |
5 |
EP1 batch after irradiation: |
10086 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 377.7870686 V T = -25 °C: 344.059824 V |
Voltage for Gain 150: |
T = +20 °C: 385.4973721 V T = -25 °C: 351.1810374 V |
Voltage for Gain 200: |
T = +20 °C: 389.8138491 V T = -25 °C: 355.1758956 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.489063568 V-1 T = -25 °C: 5.168873742 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.816660077 V-1 T = -25 °C: 9.885374357 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.61276776 V-1 T = -25 °C: 16.12666209 V-1 |
Break-through voltage: |
T = +20 °C: 405.1410069 V T = -25 °C: 369.8249651 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history