Show Hamamatsu Avalanche Photo Diode 0808007836
This is all the information about APD 0808007836. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0808007836 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2710030809/0808007836 |
| Unit: |
#2374 (barcode 1309028849) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G05 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
382.8 V |
| Dark current: |
2.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
295 |
| Position in Box: |
24 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10359 |
| |
|
| Shipment: |
|
| Grid number: |
97 |
| Position in grid: |
6 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
382.8 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.5250255 V T = -25 °C: 346.9212457 V |
| Voltage for Gain 150: |
T = +20 °C: 390.3442471 V T = -25 °C: 354.3002214 V |
| Voltage for Gain 200: |
T = +20 °C: 394.6795313 V T = -25 °C: 358.4572282 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.429218287 V-1 T = -25 °C: 4.960406938 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.7090845 V-1 T = -25 °C: 9.190347173 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.24249087 V-1 T = -25 °C: 16.28643449 V-1 |
| Break-through voltage: |
T = +20 °C: 409.5467599 V T = -25 °C: 373.4976877 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history