Show Hamamatsu Avalanche Photo Diode 3710038423
					
					This is all the information about APD 3710038423. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
							  | 
						
						
							| Serial: | 
							3710038423 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							unassigned | 
						
						
							| Unit: | 
							unassigned | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							Bochum | 
						
						
							|   | 
							  | 
						
						
							| Installation information: | 
							  | 
						
						
							| Label: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Manufacturer information: | 
							  | 
						
						
							| Wafer position: | 
							D01 | 
						
						
							| Break-through voltage: | 
							404 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							376.9 V | 
						
						
							| Dark current: | 
							16.7 nA | 
						
						
							|   | 
							  | 
						
						
							| Screening Logistics: | 
							  | 
						
						
							| Available: | 
							Yes | 
						
						
							| Storage Box: | 
							48 | 
						
						
							| Position in Box: | 
							48 | 
						
						
							| EP1 batch: | 
							4 | 
						
						
							| EP1 batch after irradiation: | 
							10088 | 
						
						
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							| Shipment: | 
							  | 
						
						
							| Grid number: | 
							none | 
						
						
							| Position in grid: | 
							none | 
						
						
							| Arrival for irradiation: | 
							28. Jun 2019 | 
						
						
							| Sent for analysis after irradiation: | 
							08. Jul 2019 | 
						
						
							| Return for assembly: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Irradiation: | 
							  | 
						
						
							| Date: | 
							04. Jul 2019 | 
						
						
							| Dose used: | 
							37 Gy | 
						
						
							| Temperature: | 
							20 °C | 
						
						
							| Position: | 
							none | 
						
						
							| Bias voltage: | 
							none      | 
						
						
							|   | 
							  | 
						
						
							| Annealing: | 
							  | 
						
						
							| Date: | 
							05. Jul 2019 | 
						
						
							| Temperature: | 
							80 °C | 
						
						
							| Duration: | 
							48 h | 
						
						
							|   | 
							  | 
						
						
							| Measurement results: | 
							  | 
						
						
							| Voltage for Gain 100: | 
							T = +20 °C: 376.8067951 V     T = -25 °C: 342.678326 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 384.4874406 V     T = -25 °C: 349.7738008 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 388.7681437 V     T = -25 °C: 353.7335482 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.777018559 V-1     T = -25 °C: 4.846385833 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 8.782534319 V-1     T = -25 °C: 10.24293002 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 15.51875862 V-1     T = -25 °C: 16.94663105 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 403.0303372 V     T = -25 °C: 367.7397191 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
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					Progression of the current during irradiation
					
						
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