Show Hamamatsu Avalanche Photo Diode 0808007826
This is all the information about APD 0808007826. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0808007826 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0808007826/2504027823 |
| Unit: |
#2884 (barcode 1309032051) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F04 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.9 V |
| Dark current: |
2.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
295 |
| Position in Box: |
16 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10359 |
| |
|
| Shipment: |
|
| Grid number: |
96 |
| Position in grid: |
7 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
379.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.7749408 V T = -25 °C: 344.5297046 V |
| Voltage for Gain 150: |
T = +20 °C: 387.5662457 V T = -25 °C: 351.8323791 V |
| Voltage for Gain 200: |
T = +20 °C: 391.8821967 V T = -25 °C: 355.9350233 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.711145199 V-1 T = -25 °C: 4.764793738 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.43596015 V-1 T = -25 °C: 9.740563015 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.79293515 V-1 T = -25 °C: 15.43533956 V-1 |
| Break-through voltage: |
T = +20 °C: 407.3821267 V T = -25 °C: 371.4243774 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
