Show Hamamatsu Avalanche Photo Diode 3703038277
This is all the information about APD 3703038277. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3703038277 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
376.8 V |
| Dark current: |
19.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
49 |
| Position in Box: |
17 |
| EP1 batch: |
1 |
| EP1 batch after irradiation: |
10089 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
28. Jun 2019 |
| Sent for analysis after irradiation: |
08. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
04. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
05. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.9651818 V T = -25 °C: 343.2543277 V |
| Voltage for Gain 150: |
T = +20 °C: 384.6331521 V T = -25 °C: 350.2872071 V |
| Voltage for Gain 200: |
T = +20 °C: 388.9216725 V T = -25 °C: 354.2189629 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.857375282 V-1 T = -25 °C: 5.054177413 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.892993738 V-1 T = -25 °C: 10.07118277 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.80029068 V-1 T = -25 °C: 16.69561448 V-1 |
| Break-through voltage: |
T = +20 °C: 403.8331083 V T = -25 °C: 368.3723213 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
