Show Hamamatsu Avalanche Photo Diode 0808007820
This is all the information about APD 0808007820. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0808007820 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0808007820/3403036574 |
| Unit: |
#2571 (barcode 1309026968) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.1 V |
| Dark current: |
2.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
295 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10359 |
| |
|
| Shipment: |
|
| Grid number: |
96 |
| Position in grid: |
16 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
379.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.1636297 V T = -25 °C: 343.8427858 V |
| Voltage for Gain 150: |
T = +20 °C: 386.9723723 V T = -25 °C: 351.1214728 V |
| Voltage for Gain 200: |
T = +20 °C: 391.3171661 V T = -25 °C: 355.2188606 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.575024225 V-1 T = -25 °C: 5.047819624 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.050717858 V-1 T = -25 °C: 9.508655131 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.09380844 V-1 T = -25 °C: 14.98689563 V-1 |
| Break-through voltage: |
T = +20 °C: 407.1431634 V T = -25 °C: 370.8284675 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history