Show Hamamatsu Avalanche Photo Diode 3516037461
This is all the information about APD 3516037461. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3516037461 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2405026307/3516037461 |
| Unit: |
#2250 (barcode 1309022809) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A10 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
383 V |
| Dark current: |
12.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
165 |
| Position in Box: |
26 |
| EP1 batch: |
199 |
| EP1 batch after irradiation: |
10355 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.0742684 V T = -25 °C: 348.3464762 V |
| Voltage for Gain 150: |
T = +20 °C: 390.8648663 V T = -25 °C: 355.6231143 V |
| Voltage for Gain 200: |
T = +20 °C: 395.2219641 V T = -25 °C: 359.7008024 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.617114897 V-1 T = -25 °C: 4.883979496 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.083114285 V-1 T = -25 °C: 9.983859558 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.04625494 V-1 T = -25 °C: 16.01786281 V-1 |
| Break-through voltage: |
T = +20 °C: 410.3262561 V T = -25 °C: 374.5135454 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history