Show Hamamatsu Avalanche Photo Diode 3513037370
This is all the information about APD 3513037370. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3513037370 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C03 |
| Break-through voltage: |
399 V |
| Voltage for Gain 100 (T=+25°C): |
374.8 V |
| Dark current: |
11.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
415 |
| Position in Box: |
46 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10649 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 374.7394698 V T = -25 °C: 340.7910384 V |
| Voltage for Gain 150: |
T = +20 °C: 382.3938752 V T = -25 °C: 347.9082903 V |
| Voltage for Gain 200: |
T = +20 °C: 386.6910844 V T = -25 °C: 351.9085029 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.845088131 V-1 T = -25 °C: 5.21206485 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.81635753 V-1 T = -25 °C: 9.938963727 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.35746201 V-1 T = -25 °C: 16.04539867 V-1 |
| Break-through voltage: |
T = +20 °C: 401.8875509 V T = -25 °C: 366.7790875 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
