Show Hamamatsu Avalanche Photo Diode 3501037059
This is all the information about APD 3501037059. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3501037059 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C14 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.9 V |
| Dark current: |
11.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
163 |
| Position in Box: |
37 |
| EP1 batch: |
197 |
| EP1 batch after irradiation: |
10431 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.432675 V T = -25 °C: 344.4305769 V |
| Voltage for Gain 150: |
T = +20 °C: 386.3781091 V T = -25 °C: 351.6729849 V |
| Voltage for Gain 200: |
T = +20 °C: 390.8162776 V T = -25 °C: 355.7435724 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.398610626 V-1 T = -25 °C: 4.78146813 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.435615574 V-1 T = -25 °C: 9.9126174 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.4052731 V-1 T = -25 °C: 15.76597603 V-1 |
| Break-through voltage: |
T = +20 °C: 405.7640253 V T = -25 °C: 370.1033404 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
