Show Hamamatsu Avalanche Photo Diode 3408037020
This is all the information about APD 3408037020. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3408037020 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0801007275/3408037020 |
| Unit: |
#2807 (barcode 1309023578) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B04 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.7 V |
| Dark current: |
10 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
163 |
| Position in Box: |
17 |
| EP1 batch: |
196 |
| EP1 batch after irradiation: |
10430 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.0093963 V T = -25 °C: 345.9604218 V |
| Voltage for Gain 150: |
T = +20 °C: 388.8907303 V T = -25 °C: 353.3903864 V |
| Voltage for Gain 200: |
T = +20 °C: 393.2878986 V T = -25 °C: 357.5589062 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.584853941 V-1 T = -25 °C: 4.909354279 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.000841675 V-1 T = -25 °C: 9.010872872 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.89824217 V-1 T = -25 °C: 16.02038396 V-1 |
| Break-through voltage: |
T = +20 °C: 408.556331 V T = -25 °C: 372.6184612 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history