Show Hamamatsu Avalanche Photo Diode 3408037010
This is all the information about APD 3408037010. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3408037010 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A07 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.6 V |
| Dark current: |
13.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
163 |
| Position in Box: |
8 |
| EP1 batch: |
196 |
| EP1 batch after irradiation: |
10430 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.990635 V T = -25 °C: 348.3005308 V |
| Voltage for Gain 150: |
T = +20 °C: 391.8606917 V T = -25 °C: 355.8043584 V |
| Voltage for Gain 200: |
T = +20 °C: 396.2382065 V T = -25 °C: 360.0047196 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.576995646 V-1 T = -25 °C: 4.730833795 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.098755319 V-1 T = -25 °C: 9.56357368 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.17877793 V-1 T = -25 °C: 15.08421998 V-1 |
| Break-through voltage: |
T = +20 °C: 411.214443 V T = -25 °C: 375.1783247 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
