Show Hamamatsu Avalanche Photo Diode 3408036999
This is all the information about APD 3408036999. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3408036999 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2705030351/3408036999 |
| Unit: |
#2783 (barcode 1309028290) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
380 V |
| Dark current: |
16.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
162 |
| Position in Box: |
48 |
| EP1 batch: |
195 |
| EP1 batch after irradiation: |
10430 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.5331911 V T = -25 °C: 345.327702 V |
| Voltage for Gain 150: |
T = +20 °C: 388.332029 V T = -25 °C: 352.6646605 V |
| Voltage for Gain 200: |
T = +20 °C: 392.6625469 V T = -25 °C: 356.762992 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.461995003 V-1 T = -25 °C: 4.855906957 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.759970896 V-1 T = -25 °C: 9.902884088 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.27745946 V-1 T = -25 °C: 15.89463499 V-1 |
| Break-through voltage: |
T = +20 °C: 407.7118463 V T = -25 °C: 371.4557875 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history