Show Hamamatsu Avalanche Photo Diode 3408036979
This is all the information about APD 3408036979. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3408036979 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3408036979/1719019826 |
| Unit: |
#2905 (barcode 1309034376) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C14 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
386.7 V |
| Dark current: |
12.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
162 |
| Position in Box: |
30 |
| EP1 batch: |
195 |
| EP1 batch after irradiation: |
10429 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.2671696 V T = -25 °C: 351.4102337 V |
| Voltage for Gain 150: |
T = +20 °C: 395.0938123 V T = -25 °C: 358.9752154 V |
| Voltage for Gain 200: |
T = +20 °C: 399.4563821 V T = -25 °C: 363.1886775 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.515504738 V-1 T = -25 °C: 4.652260646 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.855456487 V-1 T = -25 °C: 9.445996903 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.6210492 V-1 T = -25 °C: 14.5734367 V-1 |
| Break-through voltage: |
T = +20 °C: 414.2279573 V T = -25 °C: 378.1630439 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history