Show Hamamatsu Avalanche Photo Diode 3408036975
This is all the information about APD 3408036975. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3408036975 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3204034855/3408036975 |
| Unit: |
#2073 (barcode 1309022472) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G11 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
383.1 V |
| Dark current: |
11.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
162 |
| Position in Box: |
28 |
| EP1 batch: |
195 |
| EP1 batch after irradiation: |
10429 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.9377984 V T = -25 °C: 347.3813409 V |
| Voltage for Gain 150: |
T = +20 °C: 390.7461402 V T = -25 °C: 354.8478961 V |
| Voltage for Gain 200: |
T = +20 °C: 395.0880692 V T = -25 °C: 359.0261722 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.634613953 V-1 T = -25 °C: 4.664960954 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.185251883 V-1 T = -25 °C: 9.30473463 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.28827852 V-1 T = -25 °C: 15.10153975 V-1 |
| Break-through voltage: |
T = +20 °C: 410.169946 V T = -25 °C: 374.2143156 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history