Show Hamamatsu Avalanche Photo Diode 3408036962
This is all the information about APD 3408036962. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3408036962 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0817008485/3408036962 |
| Unit: |
#3579 (barcode 1309026807) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B09 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
382 V |
| Dark current: |
17 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
162 |
| Position in Box: |
21 |
| EP1 batch: |
195 |
| EP1 batch after irradiation: |
10429 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.5457576 V T = -25 °C: 346.9798764 V |
| Voltage for Gain 150: |
T = +20 °C: 390.3845478 V T = -25 °C: 354.4196282 V |
| Voltage for Gain 200: |
T = +20 °C: 394.7304382 V T = -25 °C: 358.5801023 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.423746202 V-1 T = -25 °C: 4.836778923 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.628336367 V-1 T = -25 °C: 9.012796219 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.96685324 V-1 T = -25 °C: 16.11846141 V-1 |
| Break-through voltage: |
T = +20 °C: 409.5336042 V T = -25 °C: 373.3383004 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history