Show Hamamatsu Avalanche Photo Diode 3407036900
This is all the information about APD 3407036900. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3407036900 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3407036900/2008022039 |
| Unit: |
#2182 (barcode 1309023721) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.2 V |
| Dark current: |
10.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
161 |
| Position in Box: |
31 |
| EP1 batch: |
193 |
| EP1 batch after irradiation: |
10354 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.2476763 V T = -25 °C: 343.031948 V |
| Voltage for Gain 150: |
T = +20 °C: 385.0575458 V T = -25 °C: 349.3480543 V |
| Voltage for Gain 200: |
T = +20 °C: 389.4262542 V T = -25 °C: 353.4612838 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.562638575 V-1 T = -25 °C: 5.184677082 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.913417853 V-1 T = -25 °C: 9.201357456 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.66681587 V-1 T = -25 °C: 16.50203004 V-1 |
| Break-through voltage: |
T = +20 °C: 405.3452895 V T = -25 °C: 368.8948823 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history