Show Hamamatsu Avalanche Photo Diode 3404036689
This is all the information about APD 3404036689. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3404036689 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2307024716/3404036689 |
| Unit: |
#3570 (barcode 1309040513) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C09 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.2 V |
| Dark current: |
13.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
159 |
| Position in Box: |
7 |
| EP1 batch: |
189 |
| EP1 batch after irradiation: |
10350 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.251007 V T = -25 °C: 346.7592703 V |
| Voltage for Gain 150: |
T = +20 °C: 390.1508694 V T = -25 °C: 354.1443507 V |
| Voltage for Gain 200: |
T = +20 °C: 394.539267 V T = -25 °C: 358.285099 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.501054986 V-1 T = -25 °C: 5.079993982 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.834960034 V-1 T = -25 °C: 9.280282837 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.44651015 V-1 T = -25 °C: 14.68451139 V-1 |
| Break-through voltage: |
T = +20 °C: 410.0036279 V T = -25 °C: 373.4397267 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history