Show Hamamatsu Avalanche Photo Diode 3315036396
This is all the information about APD 3315036396. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3315036396 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B10 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
387.8 V |
| Dark current: |
24.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
155 |
| Position in Box: |
46 |
| EP1 batch: |
185 |
| EP1 batch after irradiation: |
10424 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.2575429 V T = -25 °C: 353.0866118 V |
| Voltage for Gain 150: |
T = +20 °C: 395.9848513 V T = -25 °C: 360.3535687 V |
| Voltage for Gain 200: |
T = +20 °C: 400.2763064 V T = -25 °C: 364.4304811 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.597650266 V-1 T = -25 °C: 4.994098501 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.144844691 V-1 T = -25 °C: 9.353181609 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.35988823 V-1 T = -25 °C: 14.74722457 V-1 |
| Break-through voltage: |
T = +20 °C: 414.2920623 V T = -25 °C: 378.3198586 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
