Show Hamamatsu Avalanche Photo Diode 3315036382
This is all the information about APD 3315036382. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3315036382 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B09 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
385.9 V |
| Dark current: |
29.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
155 |
| Position in Box: |
36 |
| EP1 batch: |
184 |
| EP1 batch after irradiation: |
10423 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.5385953 V T = -25 °C: 351.8210277 V |
| Voltage for Gain 150: |
T = +20 °C: 395.100235 V T = -25 °C: 359.0507499 V |
| Voltage for Gain 200: |
T = +20 °C: 399.3021157 V T = -25 °C: 363.1335301 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.599305625 V-1 T = -25 °C: 5.107797737 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.235191349 V-1 T = -25 °C: 9.646863035 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.58833075 V-1 T = -25 °C: 15.30212088 V-1 |
| Break-through voltage: |
T = +20 °C: 412.5628476 V T = -25 °C: 376.7577934 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
