Show Hamamatsu Avalanche Photo Diode 3315036365
This is all the information about APD 3315036365. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3315036365 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E01 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
377.9 V |
| Dark current: |
34.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
155 |
| Position in Box: |
21 |
| EP1 batch: |
184 |
| EP1 batch after irradiation: |
10423 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.1891375 V T = -25 °C: 344.0278638 V |
| Voltage for Gain 150: |
T = +20 °C: 385.893536 V T = -25 °C: 351.1906229 V |
| Voltage for Gain 200: |
T = +20 °C: 390.2140574 V T = -25 °C: 355.2180027 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.603605167 V-1 T = -25 °C: 5.038348304 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.077734356 V-1 T = -25 °C: 9.476219782 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.05146734 V-1 T = -25 °C: 15.02887001 V-1 |
| Break-through voltage: |
T = +20 °C: 404.2383807 V T = -25 °C: 368.9544345 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
