Show Hamamatsu Avalanche Photo Diode 3315036358
This is all the information about APD 3315036358. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3315036358 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3315036358/1709019065 |
| Unit: |
#3757 (barcode 1309039388) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C12 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
389.1 V |
| Dark current: |
28.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
155 |
| Position in Box: |
14 |
| EP1 batch: |
183 |
| EP1 batch after irradiation: |
10423 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.5720428 V T = -25 °C: 354.9027851 V |
| Voltage for Gain 150: |
T = +20 °C: 397.3564864 V T = -25 °C: 362.3340357 V |
| Voltage for Gain 200: |
T = +20 °C: 401.6724754 V T = -25 °C: 366.5404096 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.479914921 V-1 T = -25 °C: 4.970325927 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.774506083 V-1 T = -25 °C: 9.175506791 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.48852582 V-1 T = -25 °C: 16.027092 V-1 |
| Break-through voltage: |
T = +20 °C: 417.0270969 V T = -25 °C: 381.1063847 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history