Show Hamamatsu Avalanche Photo Diode 3310035996
This is all the information about APD 3310035996. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3310035996 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3310035996/2005021817 |
| Unit: |
#3502 (barcode 1309036998) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D15 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.2 V |
| Dark current: |
34.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
150 |
| Position in Box: |
13 |
| EP1 batch: |
175 |
| EP1 batch after irradiation: |
10415 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.3228602 V T = -25 °C: 348.4047739 V |
| Voltage for Gain 150: |
T = +20 °C: 391.09559 V T = -25 °C: 355.65489 V |
| Voltage for Gain 200: |
T = +20 °C: 395.4482624 V T = -25 °C: 359.7192672 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.518217403 V-1 T = -25 °C: 4.832993638 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.872514662 V-1 T = -25 °C: 10.01739934 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.59921766 V-1 T = -25 °C: 16.03575744 V-1 |
| Break-through voltage: |
T = +20 °C: 410.0497031 V T = -25 °C: 373.9898493 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history