Show Hamamatsu Avalanche Photo Diode 3310035965
This is all the information about APD 3310035965. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3310035965 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3310035965/3403036609 |
| Unit: |
#2514 (barcode 1309026722) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G03 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
386.1 V |
| Dark current: |
31 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
149 |
| Position in Box: |
22 |
| EP1 batch: |
174 |
| EP1 batch after irradiation: |
10414 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.6531422 V T = -25 °C: 351.4124143 V |
| Voltage for Gain 150: |
T = +20 °C: 394.4101497 V T = -25 °C: 358.7175714 V |
| Voltage for Gain 200: |
T = +20 °C: 398.7116634 V T = -25 °C: 362.8090228 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.452347903 V-1 T = -25 °C: 4.827012138 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.76158291 V-1 T = -25 °C: 9.920098407 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.40440437 V-1 T = -25 °C: 15.90294866 V-1 |
| Break-through voltage: |
T = +20 °C: 412.8045752 V T = -25 °C: 376.9581121 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history