Show Hamamatsu Avalanche Photo Diode 3310035956
This is all the information about APD 3310035956. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3310035956 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B05 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
385.8 V |
Dark current: |
19.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
149 |
Position in Box: |
14 |
EP1 batch: |
174 |
EP1 batch after irradiation: |
10413 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 385.6747584 V T = -25 °C: 350.8430567 V |
Voltage for Gain 150: |
T = +20 °C: 393.5163476 V T = -25 °C: 358.1446069 V |
Voltage for Gain 200: |
T = +20 °C: 397.8617412 V T = -25 °C: 362.2591791 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.385022875 V-1 T = -25 °C: 5.032297419 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.505988194 V-1 T = -25 °C: 9.448844533 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.8230831 V-1 T = -25 °C: 14.95734603 V-1 |
Break-through voltage: |
T = +20 °C: 413.2648977 V T = -25 °C: 377.3480355 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history